Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2003-07-22
2008-08-05
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C257SE21413
Reexamination Certificate
active
07407838
ABSTRACT:
A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 μm2or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 μm2or less. A method of manufacturing a thin-film transistor comprising the steps of:forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions each having a plane area of 1000 μm2or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.
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Notice of Rejection (Japanese Patent Application No. 2003-285552) mailed Apr. 17, 2007.
Arai Michio
Kobori Isamu
Fish & Richardson P.C.
Isaac Stanetta D
Lebentritt Michael S.
Semiconductor Energy Laboratory Co,. Ltd.
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