Method of manufacturing a semiconductor memory device having...

Details Method of manufacturing a semiconductor memory device having... Method of manufacturing a semiconductor memory device having...

2005-03-22

2005-03-22

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S241000, C438S258000, C438S618000, C438S620000, C438S637000, C438S622000, C438S238000, C438S386000, C438S399000, C438S250000, C438S239000, C257S296000

Reexamination Certificate

active

06869872

ABSTRACT:
The present invention discloses a semiconductor memory device having a bit line and a metal contact stud, wherein the metal contact stud is formed on a different layer from a layer on which the bit lines are formed.

REFERENCES:
patent: 6037216 (2000-03-01), Liu et al.
patent: 6150689 (2000-11-01), Narui et al.
patent: 6238971 (2001-05-01), Parekh et al.

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