Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

1997-03-12

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438257, 438706, H01L 214763, H01L 21336, H01L 21302

Patent

active

059813814

ABSTRACT:
In a semiconductor memory device, first insulating films are formed on a semiconductor substrate. Element isolating layers are formed on the semiconductor substrate for isolating element forming regions set at regular intervals in the semiconductor substrate, such that the upper surface of the element isolating layers are located at a higher level than the upper surface of the semiconductor substrate. First conductive layers are formed at regular intervals on the first insulating films. A second insulating film is formed on the element isolating layers and the first conductive layer. A second conductive layer, which has a lower surface with irregularities corresponding to the configurations of the element isolating layers and the first conductive layer, and a flat upper surface irrespective of the configurations of the element isolating films and the first conductive layer, is formed on the second insulating film. A wiring layer, which includes a high-melting-point metal, is formed on the second conductive layer.

REFERENCES:
patent: 5150178 (1992-09-01), Mori
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5707897 (1998-01-01), Lee et al.
patent: 5731237 (1998-03-01), Sato
Wolf, S.;Silicon Processing for the VLSI Era, vol. 2; Lattice Press, Sunset Beach, Ca.; pp.222-236, 1990.

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