Method of manufacturing a semiconductor integrated circuit...

Details Method of manufacturing a semiconductor integrated circuit... Method of manufacturing a semiconductor integrated circuit...

2007-12-17

2011-11-22

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000, C438S018000, C257S048000, C257SE21529, C257SE21531

Reexamination Certificate

active

08062911

ABSTRACT:
A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

REFERENCES:
patent: 2002/0129323 (2002-09-01), Kasukabe et al.
patent: 2006/0094162 (2006-05-01), Yabushita et al.
patent: 2006/0192575 (2006-08-01), Kasukabe et al.
patent: 2006-118945 (2006-05-01), None

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