Method of manufacturing a semiconductor integrated circuit...

Details Method of manufacturing a semiconductor integrated circuit... Method of manufacturing a semiconductor integrated circuit...

2005-02-08

2005-02-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S169000, C438S197000, C438S573000, C438S582000, C438S685000

Reexamination Certificate

active

06852579

ABSTRACT:
Oxidation on the surface of a film of refractory metal constituting a gate electrode (word line WL) is suppressed by forming an insulation film constituting a cap insulation film of the gate electrode (word line WL) at a temperature of 500° C. or lower. Further, oxidation on the surface of the refractory metal film exposed to the side wall of the gate electrode (word line WL) is suppressed by forming an insulation film constituting the side wall spacer of the gate electrode (word line WL) at a temperature of 500° C. or lower.

REFERENCES:
patent: 3914127 (1975-10-01), Buss et al.
patent: 5188975 (1993-02-01), Kojima et al.
patent: 5319231 (1994-06-01), Yamazaki et al.
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5693553 (1997-12-01), Kashihara et al.
patent: 5733812 (1998-03-01), Ueda et al.
patent: 5736416 (1998-04-01), Johansson
patent: 5753530 (1998-05-01), Akamine et al.
patent: 5760442 (1998-06-01), Shigyo et al.
patent: 5780345 (1998-07-01), Yamazaki et al.
patent: 5904556 (1999-05-01), Suzuki et al.

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