Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-01
2005-03-01
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S014000
Reexamination Certificate
active
06861344
ABSTRACT:
The corrosion of a pad portion on TEG is prevented, and the wettability of a solder and the shear strength after solder formation of a pad portion of an actual device are improved. A third layer wiring M3on a chip area CA of a semiconductor wafer and a third layer wiring M3on a scribe area SA are respectively comprised of a TiN film M3a, an Al alloy film M3b, and a TiN film M3c. A second pad portion PAD2as the top of a rewiring49on the chip area CA is cleaned. Alternatively, an Au film53ais formed thereon by an electroles splating method. Further, after the formation of the Au film53a, a retention test is carried out. Thereafter, further, an Au film53bis formed and a solder bump electrode55is formed. As a result, it is possible to prevent the corrosion of a first pad portion PAD1of the third layer wiring M3on the scribe area SA which is TEG due to a plating solution or the like by the TiN film M3c. Further, it is possible to improve the wettability of a solder and the shear strength after solder formation of the second pad portion PAD2by the Au films53aand53b.
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Abe Hiromi
Yajima Akira
Yamamoto Ken-ichi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corporation
Wilczewski M.
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