Method of manufacturing a semiconductor/glass composite material

Details Method of manufacturing a semiconductor/glass composite material Method of manufacturing a semiconductor/glass composite material

1980-03-13

1981-10-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29572, 29580, 29590, 1563082, 156633, 156657, 156662, 252 795, 357 30, H01L 21306

Patent

active

042959233

ABSTRACT:
In a method of manufacturing a semiconductor/glass composite material, a glass substrate is covered partially by a covering layer, a semiconductor is connected by pressure and heat to the surface of the substrate not covered by the covering layer, and the semiconductor is then etched away by means of etch polishing to the thickness of the covering layer. The covering may be silicon dioxide, and may be applied to substrate by sputtering or by deposition from the gas phase. The etching solution is NH.sub.4 OH and H.sub.2 O.sub.2 in the ratio 700 to 1.
The composite material may be used as a photocathode in an image converter or image intensifier tube.

REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3951707 (1976-04-01), Kurtz et al.
patent: 4069094 (1978-01-01), Shaw

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