Method of manufacturing a semiconductor film and method of...

Details Method of manufacturing a semiconductor film and method of... Method of manufacturing a semiconductor film and method of...

2006-10-31

2006-10-31

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S471000, C438S486000, C257SE29117

Reexamination Certificate

active

07129120

ABSTRACT:
In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by103on the surface of an amorphous silicon film102. Then a crystalline silicon film104is obtained by a heat treatment. At this time, the crystallization is remarkably improved by the action of the nickel elements. During this crystallization, nickel elements are diffused in a film. Then a thermal oxide film105is formed as a barrier film, and a silicon film106containing a high concentration of phosphorus is formed. By carrying out a heat treatment, the nickel elements in the crystalline silicon film104are transferred into the silicon film106. In this way, the concentration of nickel in the crystalline silicon film104is lowered.

REFERENCES:
patent: 4561171 (1985-12-01), Schlosser
patent: 4692345 (1987-09-01), Nishura et al.
patent: 4994399 (1991-02-01), Aoki
patent: 5085711 (1992-02-01), Iwamoto et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5229306 (1993-07-01), Lindberg et al.
patent: 5244819 (1993-09-01), Yue
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5380372 (1995-01-01), Campe et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426061 (1995-06-01), Sopori
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5441899 (1995-08-01), Nakai et al.
patent: 5444001 (1995-08-01), Tokuyama
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5597747 (1997-01-01), Chen
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5605847 (1997-02-01), Zhang
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5616507 (1997-04-01), Nakai et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kasumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696011 (1997-12-01), Yamazaki et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5736420 (1998-04-01), Min et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5828429 (1998-10-01), Takemura
patent: 5830784 (1998-11-01), Zhang et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5877083 (1999-03-01), Yamazaki
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5895935 (1999-04-01), Yamazaki et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5899709 (1999-05-01), Yamazaki et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 5962871 (1999-10-01), Zhang et al.
patent: 5977559 (1999-11-01), Zhang et al.
patent: 5998841 (1999-12-01), Suzawa
patent: 6013544 (2000-01-01), Makita et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6133073 (2000-10-01), Yamazaki et al.
patent: 6156628 (2000-12-01), Ohnuma et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6235563 (2001-05-01), Oka et al.
patent: 6242290 (2001-06-01), Nakajima et al.
patent: 6246070 (2001-06-01), Yamazaki et al.
patent: 6251712 (2001-06-01), Tanaka et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6326642 (2001-12-01), Yamazaki et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6359320 (2002-03-01), Yamazaki et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6383852 (2002-05-01), Zhang et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6424012 (2002-07-01), Kawasaki et al.
patent: 6455401 (2002-09-01), Zhang et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 6784455 (2004-08-01), Maekawa et al.
patent: 6962837 (2005-11-01), Yamazaki
patent: 2001/0041397 (2001-11-01), Fukushima
patent: 2002/0013114 (2002-01-01), Ohtani et al.
patent: 2002/0134981 (2002-09-01), Nakamura et al.
patent: 2003/0036225 (2003-02-01), Nakajima et al.
patent: 2003/0089690 (2003-05-01), Yamazaki et al.
patent: 2003/0092225 (2003-05-01), Yamazaki et al.
patent: 0 556 795 (1993-08-01), None
patent: 0 604 234 (1994-06-01), None
patent: 60-119733 (1985-06-01), None
patent: 63-168021 (1988-07-01), None
patent: 03-229415 (1991-10-01), None
patent: 05-299349 (1993-11-01), None
patent: 06-196490 (1994-07-01), None
patent: 06-267849 (1994-09-01), None
patent: 06-268212 (1994-09-01), None
patent: 06-333824 (1994-12-01), None
patent: 06-333825 (1994-12-01), None
patent: 07-283134 (1995-10-01), None
patent: 08-130314 (1996-05-01), None
patent: 08-213316 (1996-08-01), None
patent: 08-330602 (1996-12-01), None
patent: 09-115831 (1997-05-01), None
patent: 2000-299285 (2000-10-01), None
patent: 2003-178980 (2003-06-01), None
patent: 2003-282435 (2003-10-01), None
Official Filing Receipt, Specification, Claims, Abstract of U.S. Appl. No. 10/706,986, filed Nov. 14, 2003.
Official Filing Receipt, Specification, Claims, Abstract of U.S. Appl. No. 10/678,139, filed Oct. 6, 2003.
Gang Liu and S. J. Fonash, “Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing,” Appl. Phys. Lett. 55 (7), Aug. 14, 1999, pp. 660-662.
Gang Liu and Steven J. Fonash, “Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low temperature processing,” Appl. Phys. Lett. 62 (20), May 17, 1993, pp. 2554-2556.
R. Kaddad, J. Smith, W. S. Lau, S. J. Fonash, “Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon,” J. Appl. Phys. 65 (5), Mar. 1, 1989, pp. 2069-2072.
C. Hayzelden, J.L. Batstone, R. C. Cammarata, “In situ trnamission electron microscopy studies of silicide-mediated crystallization of amorphous silicon,” Appl. Phys. Lett. 60 (2), Jan. 13, 1992, pp. 225-227.
A. V. Dvurechenskii et al., Transport Phenomena in Amorphous Silicon Doped by Ion Implanation of 3d Metals, Phys. Stat. Sol. (a) 95, 635 (1986), Jan. 1, 1986, pp. 635-640.
R. Kakkad, G. Liu, and S. J. Fonash, “Low temperature Selective Crystallization of Amorphous Silicon,” Journal of Non-Crystalline Solids, 115, Aug. 1, 1989, pp. 66-68.
F. Edelman et al., Structure and Transport Properties of Microcrystalline SiGe Films, pp. 232-235 (IEEE).
T. Hempel and O. Schoenfeld, “Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films,” Solid State Communications, vol. 85, No. 11, Mar. 1, 1993, pp. 921-924.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor film and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor film and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor film and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3719016