Method of manufacturing a semiconductor element

Details Method of manufacturing a semiconductor element Method of manufacturing a semiconductor element

1981-11-05

1983-05-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29580, 156656, 156657, 156662, 204 32S, 427 92, H01L 21312, C23F 102

Patent

active

043838863

ABSTRACT:
An improved semiconductor element-manufacturing method which saves a semiconductor wafer from the occurrence of cracks or damage during the manufacture of a semiconductor element and enables solder layers to be deposited without irregularities in the thickness. The method starts with the step of forming a first metal layer acting as an ohmic electrode on each side of the element regions of a semiconductor wafer in which a plurality of active elements are formed or on the whole surface of each side of the semiconductor wafer. Then a second metal layer which has an anticorrosive property and acts as a brazing material when the semiconductor element is mounted between a pair of electrodes is selectively deposited by electroplating on each of the element areas in the first metal layers.
Finally, those portions of the semiconductor wafer which are interposed between the active elements are chemically etched off with the second metal layers used as masks to separate the semiconductor elements from each other, thereby producing a plurality of semiconductor elements, each of which has its surfaces coated with the first and second metal layers.

REFERENCES:
patent: 3046176 (1962-07-01), Bosenberg
patent: 3288662 (1966-11-01), Weisberg
patent: 3490140 (1970-01-01), Knight et al.
patent: 3625837 (1971-12-01), Nelson et al.
patent: 3639218 (1972-02-01), Missel

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