Method of manufacturing a semiconductor device without...

Details Method of manufacturing a semiconductor device without... Method of manufacturing a semiconductor device without...

2006-05-02

2006-05-02

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S660000

Reexamination Certificate

active

07037836

ABSTRACT:
A semiconductor device which effectively reduces copper oxide layers on copper conductive lines is disclosed. The method includes forming a first insulating layer on a semiconductor substrate; forming a first conductive line by depositing a conductive material on the first insulating layer and selectively patterning the conductive material. A second insulating layer is deposited on top of the substrate including on the first conductive line. A via hole is formed by selectively patterning the second insulating layer to expose a certain portion of the first conductive line. A natural oxide layer is removed by plasma-processing the natural oxide layer using H2+CO gas.

REFERENCES:
patent: 6090701 (2000-07-01), Hasunuma et al.
patent: 6126989 (2000-10-01), Robinson et al.
patent: 6218303 (2001-04-01), Lin
patent: 6261951 (2001-07-01), Buchwalter et al.
patent: 6399486 (2002-06-01), Chen et al.

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