Method of manufacturing a semiconductor device with improved uni

Details Method of manufacturing a semiconductor device with improved uni Method of manufacturing a semiconductor device with improved uni

1996-08-29

1998-06-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438671, 438672, 438666, 438641, 438645, H01L 2144

Patent

active

057633240

ABSTRACT:
The uniformity in buried condition of conductors in contact holes is enhanced over the entire wafer surface. A first resist is coated on a conductor provided selectively in a contact hole formed in an insulating film provided on a semiconductor substrate, as well as on the insulating film, and a resultant structure is flattened. The first resist and the conductor are removed with their portions being left. A second resist is coated on the conductor and insulating film and a resultant structure is flattened. The second resist and the conductor are removed until the insulating film is exposed.

REFERENCES:
patent: 4824802 (1989-04-01), Brown et al.
patent: 4987099 (1991-01-01), Flanner
patent: 5262354 (1993-11-01), Cote et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device with improved uni does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device with improved uni, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with improved uni will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2198580