Method of manufacturing a semiconductor device with improved con

Details Method of manufacturing a semiconductor device with improved con Method of manufacturing a semiconductor device with improved con

1997-12-17

1999-10-19

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438905, 438958, 438790, 438787, 438789, 438778, 438758, H01L 21316

Patent

active

059703830

ABSTRACT:
The uniformity of the thickness of a deposition layer, generated by a chemical vapor deposition (CVD) process, on a semiconductor wafer is enhanced by providing an undercoating on the deposition chamber. The undercoating is formed at a deposition rate significantly faster than the deposition rate of the material on the wafer. A thin precoat is typically formed over the undercoating. Another method of providing uniformity of thickness includes altering the temperature of the wafer or a series of wafers to alter the deposition rate. The alteration of the temperature of the wafer may include the use of a temperature ramp which increases or decreases the deposition temperature between two or more wafers in a series of wafers.

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