Method of manufacturing a semiconductor device with a multilayer

Details Method of manufacturing a semiconductor device with a multilayer Method of manufacturing a semiconductor device with a multilayer

1998-04-20

2000-11-07

Utech, Benjamin L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, H01L 2144

Patent

active

061436518

ABSTRACT:
A method of manufacturing a semiconductor device with a multilayer wiring (6, 11, 14) with aluminum conductor tracks (7, 12, 15) which are insulated from one another by insulating layers (9, 13). According to the method, an aluminum conductor track (20) provided on a surface (1) of a semiconductor body (2) is covered with a layer of insulating material (21), whereupon a contact window (22) with a wall (23) reaching down to the conductor track is formed in this insulating layer. A conductive intermediate layer (24, 28) and an aluminum layer (25, 29) are provided on this wall, whereupon a heat treatment is carried out such that aluminum (26) grows from the conductor track into the contact window. A conductive intermediate layer of titanium is provided on the wall of the contact window. A very thin, closed aluminum layer, which remains closed also during the heat treatment, can be formed on this titanium layer, which can be provided on the wall with a small thickness. The method is accordingly suitable for making semiconductor devices with multilayer wirings having contact windows of 0.5 .mu.m or smaller and having aspect ratios above 1.

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