Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-29
2000-09-12
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438623, 438624, 438625, 438628, 438631, 438626, 438906, H01L 214763
Patent
active
061177636
ABSTRACT:
A method of making a semiconductor device includes forming a low permittivity dielectric layer over one or more conductive lines of a semiconductor device. The dielectric layer is made using a silicon-containing material having a relatively low permittivity including, for example, silicon oxyfluoride (SiO.sub.y F.sub.x) and hydrogen silsesquioxane (HSQ). An optional oxide layer may be formed over the dielectric layer. At least a portion of the dielectric layer and/or the optional oxide layer is subsequently removed to form a planar dielectric layer having a contaminated surface layer. The contaminated surface layer is due to exposure to water and is removed by, for example, exposing the surface to an acid, such as hydrofluoric acid.
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Cheung Robin
May Charles
Advanced Micro Devices , Inc.
Gurley Lynne A.
Tsai Jey
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