Method of manufacturing a semiconductor device using silicon car

Details Method of manufacturing a semiconductor device using silicon car Method of manufacturing a semiconductor device using silicon car

1981-05-12

1982-09-28

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156DIG64, 156643, 156653, 1566591, 20412965, 204192D, 427 39, 427 85, 427 93, 427 95, 427259, 427 88, 430314, 430317, 148187, H01L 21314, H01L 21316

Patent

active

043518940

ABSTRACT:
A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.

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Bean et al., "Some Properties of Vapor Deposited SiC"; In J. Electrochm Soc.: Solid State Science; vol. 114, No. 11, Nov. 1967; pp. 1158-1161.
Walker "A method for Etching of Pyrolytic Silicon Carbide", J. Mat. Sci., vol. 2, pp. 197-199, (1967).
Cooks et al., "Laser Reflectogram Method for the Study of Crystal Surfaces and Epitaxial Deposit", J. Mat. Sci., vol. 2, pp. 470-473 (1967).
Jackson et al., "Fabrication of Epitaxial SiC Films on Silicon", Trans Metal Soc. AIME, vol. 233, pp. 468-473, (1965).
Healy, "Integrated Semiconductor Device", IBM Tech. Disclosure Bulletin, vol. 8, No. 7, Dec., 1965.

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