Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-17
2006-10-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S727000
Reexamination Certificate
active
07122478
ABSTRACT:
A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact hole in the interlayer dielectric by etching the interlayer dielectric using the polysilicon layer pattern as an etching mask; (d) removing the polysilicon layer pattern by an etching process that has a large etching selectivity of the polisilicon layer with respect to the interlayer dielectric and about 3% or less etching uniformity; and (e) forming a contact by filling the contact hole with a conductive material.
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English Abstract* * *.
Choi Sang Jun
Han Jeong-Nam
Han Woo-Sung
Hong Chang-Ki
Shim Woo-Gwan
Doty Heather
F.Chau & Associates LLC
Jr. Carl Whitehead
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