Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2005-04-19
2005-04-19
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
Reexamination Certificate
active
06881597
ABSTRACT:
Disclosed is a technique capable of improving a yield of a semiconductor device by measuring a plurality of TEGs arranged in a scribe region. A first electrode pad connected to each terminal of a TEG is formed as a rectangular, minute, isolated pattern having a side length of about 0.5 μm or shorter and constituted of an uppermost layer wiring on a semiconductor substrate, and therefore, a great number of TEGs can be laid in a first scribe region. The characteristic evaluation or the failure analysis is performed by contacting a nanoprobe having a tip radius of curvature of 0.05 μm to 0.8 μm to the first electrode pad.
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Arakawa Fumiko
Asayama Kyoichiro
Kamohara Shiro
Mitsui Yasuhiro
Ohji Yuzuru
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