Method of manufacturing a semiconductor device to provide...

Details Method of manufacturing a semiconductor device to provide... Method of manufacturing a semiconductor device to provide...

2006-05-23

2006-05-23

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000

Reexamination Certificate

active

07049214

ABSTRACT:
A method is provided to improve the adhesion between bonding pads and ball portions of gold wires to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 μm and the diameter of the ball portion is smaller than 55 μm or the diameter of the wire portion of each gold wire is not larger than 25 μm.

REFERENCES:
patent: 5891796 (1999-04-01), Nakamura et al.
patent: 6815260 (2004-11-01), Ino
patent: 07-335886 (1995-12-01), None
patent: 08-127828 (1996-05-01), None

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