Method of manufacturing a semiconductor device including a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S617000, C029S860000

Reexamination Certificate

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07153764

ABSTRACT:
A method of manufacturing a semiconductor device includes an improved bump forming process. The bump forming process includes a bump forming step for forming a bump on the pad by feeding a gold wire from a capillary while moving the capillary; a sliding step of slightly moving the capillary in an almost horizontal direction after the formation of the bump to reduce the strength of the base portion of the gold wire connected to the bump; and a wire cutting step of cutting the gold wire at the base portion after the sliding step. In the sliding step, a moving speed of the capillary is made smaller than that in the bump forming step.

REFERENCES:
patent: 5060843 (1991-10-01), Yasuzato et al.
patent: 6207549 (2001-03-01), Higashi et al.
patent: 5-006893 (1993-01-01), None
patent: 5-235002 (1993-09-01), None
patent: 11-307571 (1999-11-01), None
patent: 2000-188303 (2000-07-01), None
patent: 2001-148394 (2001-05-01), None
patent: 2002-280412 (2002-09-01), None

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