Method of manufacturing a semiconductor device including a...

Details Method of manufacturing a semiconductor device including a... Method of manufacturing a semiconductor device including a...

2008-05-27

2008-05-27

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S592000, C438S630000, C438S301000, C257SE21439

Reexamination Certificate

active

07378344

ABSTRACT:
A method for manufacturing a MOSFET equipped with a silicide layer over shallow source and drain junctions without leakage generation is provided. By restricting the temperature of manufacturing steps after the silicide formation below a critical temperature Tc, which is defined below as a function of a junction depth Dj from 20 nm to 60 nm, leakage generation is practically suppressed.Tc=a×Dj+b,⁢wherea=6.11⁢(20<Dj≤26)=1.60⁢(26<Dj≤60),⁢b=290.74⁢(20<Dj≤26)=408⁢(26<Dj≤60),Dj is a junction depth (nm) measured from the lower surface of the silicide layer, and Tc is a critical temperature (° C.) during a heat treatment.

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