Method of manufacturing a semiconductor device including...

Details Method of manufacturing a semiconductor device including... Method of manufacturing a semiconductor device including...

2006-08-01

2006-08-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S587000, C438S691000

Reexamination Certificate

active

07084022

ABSTRACT:
A method of manufacturing a semiconductor device comprises: forming a first pattern in a first region over a semiconductor substrate; forming a second pattern in a second region separated from the first region over the semiconductor substrate; depositing an interlayer insulation film to cover the first and second patterns; forming a photoresist film on the interlayer insulation film; treating the photoresist film in stepper exposure and development to form a photoresist pattern of a photomask having its device pattern matched with the first pattern and its alignment marks matched with the second pattern; selectively etching off the interlayer insulation film over the first and second patterns, with the photoresist pattern; and after removing the photoresist pattern, flattening the interlayer insulation film to expose the surfaces of the first and second patterns, respectively.

REFERENCES:
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 2003/0032231 (2003-02-01), Efland et al.
patent: 2003/0036025 (2003-02-01), Hirooka
patent: 04-123439 (1992-04-01), None
patent: 2000-294557 (2000-10-01), None
patent: 10-2002-0089998 (2002-11-01), None
Saito et al., “Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs,” Jpn. J. Appl. Phys. (Apr. 1999), 38:2227-31.
Copy of Korean Office Action citing KR 10-2002-0089998.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3637885