Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-04-12
2011-04-12
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S460000, C438S461000, C438S463000, C438S464000, C257S062000, C257SE21238, C257SE23002
Reexamination Certificate
active
07923350
ABSTRACT:
A method of manufacturing a semiconductor device. The method includes providing a wafer having a first face and a second face opposite the first face, selectively doping the wafer via the first face to selectively form etch stop regions in the wafer and etching the wafer at the second face to the etch stop regions.
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Fuergut Edward
Kroeninger Werner
Mahler Joachim
Abdelaziez Yasser A
Dicke, Billig & Czaja P.L.L.C.
Garber Charles
Infineon - Technologies AG
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