Method of manufacturing a semiconductor device including...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S460000, C438S461000, C438S463000, C438S464000, C257S062000, C257SE21238, C257SE23002

Reexamination Certificate

active

07923350

ABSTRACT:
A method of manufacturing a semiconductor device. The method includes providing a wafer having a first face and a second face opposite the first face, selectively doping the wafer via the first face to selectively form etch stop regions in the wafer and etching the wafer at the second face to the etch stop regions.

REFERENCES:
patent: 4537654 (1985-08-01), Berenz et al.
patent: 5040020 (1991-08-01), Rauschenbach et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 6187611 (2001-02-01), Preston et al.
patent: 6624522 (2003-09-01), Standing et al.
patent: 6911392 (2005-06-01), Bieck et al.
patent: 6940089 (2005-09-01), Cheng et al.
patent: 6964915 (2005-11-01), Farnworth et al.
patent: 7227176 (2007-06-01), Wu et al.
patent: 7268012 (2007-09-01), Jiang et al.
patent: 7300857 (2007-11-01), Akram et al.
patent: 2007/0082480 (2007-04-01), Kinzer et al.
patent: 2008/0054479 (2008-03-01), Watanabe
patent: 4411409 (1995-10-01), None
patent: 1148544 (2001-10-01), None
patent: 1 790 002 (2008-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device including... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2703948

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.