Method of manufacturing a semiconductor device, in which pattern

Details Method of manufacturing a semiconductor device, in which pattern Method of manufacturing a semiconductor device, in which pattern

1984-03-30

1985-04-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156643, 156653, 156657, 156662, 156904, B44C 122, C03C 1500, C03C 2506

Patent

active

045142513

ABSTRACT:
In a method of manufacturing a semiconductor device, ions are implanted into a layer of silicon nitride over a part of its surface, and the layer is then subjected to an etching treatment. According to the present invention, before the etching treatment takes place, but after the ion implantation, the layer is subjected to a heat treatment in which the implanted part of the layer obtains a higher resistance to etching than the non-implanted part. The heat treatment occurs at temperatures above 750.degree. C. Thus, a negative image of a patterned ion irradiation can be formed in the silicon nitride layer. As a result, the number of cases in which an etching or oxidation mask can be formed in a silicon nitride layer without using additional mask is considerably increased.

REFERENCES:
patent: 4108715 (1978-08-01), Ishikawa et al.

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