Method of manufacturing a semiconductor device having silicon is

Details Method of manufacturing a semiconductor device having silicon is Method of manufacturing a semiconductor device having silicon is

1993-10-25

1995-11-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

054666210

ABSTRACT:
A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode and the necessary insulating layer are added can maintain the necessary amount of electric current by securing the height of the semiconductor layer and also can have its plane size reduced minutely. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.

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