Method of manufacturing a semiconductor device having self align

Details Method of manufacturing a semiconductor device having self align Method of manufacturing a semiconductor device having self align

1995-06-05

1997-01-07

Fourson, George

Fishing, trapping, and vermin destroying

437228, 437 40, 1566561, 1566571, H01L 2144

Patent

active

055916708

ABSTRACT:
A highly integrated semiconductor device and method for manufacturing the same are disclosed. The device has a self-aligned contact structure for increasing a contact margin upon forming a self-aligned buried contact hole. An oxide film of an upper portion of a gate electrode is chamfered in order to form a self-aligned buried contact hole. Therefore, a self-aligned contact hole can be formed without enhancing the step, and as a result, the step between the cell and the peripheral portion of the cell can be reduced.

REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4419810 (1983-12-01), Riseman
patent: 5302536 (1994-04-01), Josquin
patent: 5403435 (1995-04-01), Cathey et al.

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