Method of manufacturing a semiconductor device having ohmic elec

Details Method of manufacturing a semiconductor device having ohmic elec Method of manufacturing a semiconductor device having ohmic elec

1995-12-19

1999-07-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438597, 438603, 438660, H01L 2128

Patent

active

059240024

ABSTRACT:
A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer containing Ni, Sn and AuGe is formed on one main surface of the n-type GaAs. In the second process, the n-type GaAs is subjected to a heat treatment at a temperature which is equal to or higher than 190 C. and equal to or lower than 300 C. Thus, the ohmic electrode is formed on the one main surface of the n-type GaAs.

REFERENCES:
patent: 5284798 (1994-02-01), Ibuka et al.
patent: 5309022 (1994-05-01), Gill et al.
patent: 5387549 (1995-02-01), Kobayashi
patent: 5393698 (1995-02-01), Kaiser et al.
Patrick et al., "Low-temperature annoaled contacts to very thin GaAs epilayers", Appl. Phys. Lett. 48(15), Apr. 1986, pp. 986-988.

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