Method of manufacturing a semiconductor device having nitrogen-b

Details Method of manufacturing a semiconductor device having nitrogen-b Method of manufacturing a semiconductor device having nitrogen-b

1997-12-18

2000-10-03

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438723, 438788, 438792, H01L 21469

Patent

active

061272841

ABSTRACT:
A semiconductor device having a nitrogen-bearing oxide gate insulating layer and methods of manufacture thereof are disclosed. A semiconductor device is formed by selecting a nitrogen-bearing species capable of providing a desired depth-distribution of nitrogen when an oxide layer is formed using the nitrogen-bearing species. The oxide layer is formed over a substrate, the oxide layer having the desired depth-distribution of nitrogen. A part of the oxide layer is selectively removed, giving the oxide layer a resultant depth-distribution of nitrogen. In accordance with another aspect of the process, a semiconductor device is formed by forming, in a reaction chamber, an oxide layer including nitrogen-bearing species on a substrate. A part of the oxide layer is selectively removed in the same reaction chamber.

REFERENCES:
patent: 5296411 (1993-04-01), Gardner et al.
patent: 5719065 (1994-09-01), Takemura et al.

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