Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-21
2005-06-21
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S633000, C438S643000, C438S653000, C438S685000, C438S687000
Reexamination Certificate
active
06908847
ABSTRACT:
A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.
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Imai Toshinori
Noguchi Junji
Ohashi Naofumi
Saito Tatsuyuki
Tamaru Tsuyoshi
Antonelli Terry Stout & Kraus LLP
Nguyen Thanh
Renesas Technology Corp.
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