Method of manufacturing a semiconductor device having a wiring f

Details Method of manufacturing a semiconductor device having a wiring f Method of manufacturing a semiconductor device having a wiring f

1995-05-24

1997-08-26

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

437188, 438686, H01L 21268, H01L 21283

Patent

active

056610785

ABSTRACT:
In a semiconductor device according to the present invention, a diffusion layer is formed on a silicon substrate, and a Silicon oxide film is deposited thereon. A hole communicating with the diffusion layer is formed in the silicon oxide film. A silver bromide emulsion is applied to the silicon oxide film having the hole by the spin coat technique. The silver bromide emulsion is irradiated with light through a mask to leave only that portion of the emulsion which is exposed by the light. By doing so, a metal wiring is formed integrally with a via hole, and thus decreased in resistance and suitable for forming the via hole. Consequently, a semiconductor device having such a wiring can be obtained easily, inexpensively.

REFERENCES:
patent: 4425196 (1984-01-01), Bessette et al.
patent: 4661214 (1987-04-01), Young
patent: 5043244 (1991-08-01), Cairncross et al.
patent: 5301349 (1994-04-01), Nakata et al.
patent: 5384230 (1995-01-01), Berg
Wolf, Silicon Processing, vol. 2, 1990, Lattice Press, pp. 101-111.
IBMTDB, Pressman et al., Silver Metallurgy for Semiconductor Device, vol. 13, No. 5, Oct. 1970 pp. 1118-1119.

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