Method of manufacturing a semiconductor device having a single c

Details Method of manufacturing a semiconductor device having a single c Method of manufacturing a semiconductor device having a single c

1997-11-24

2000-05-30

Tsai, Jey

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438253, 438258, 438666, H01L 218242

Patent

active

060690607

ABSTRACT:
It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.

REFERENCES:
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5557121 (1996-09-01), Kozuka et al.
patent: 5582640 (1996-12-01), Okada et al.
patent: 5739563 (1998-04-01), Kawakubo et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having a single c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having a single c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a single c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1909725