Method of manufacturing a semiconductor device having a layer of

Details Method of manufacturing a semiconductor device having a layer of Method of manufacturing a semiconductor device having a layer of

1982-09-08

1983-07-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156668, 156904, 427 90, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

043942113

ABSTRACT:
In order to selectively reduce the etching rate of the polyimide resin layer, ion implantation is carried out thereto. Preferably, the impurity ion such as As.sup.+, P.sup.+, B.sup.+, BF.sub.2.sup.+ is implanted with dosage of 1.times.10.sup.14 cm.sup.-2 or more. As a result, the polyimide resin layer has a resistivity to etching by the etchant containing hydrazine. This method can be used for preventing generation of unwanted etching in the process of forming the via hole in case of using the polyimide resin as the interlayer insulator for multiwiring structure.

REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having a layer of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having a layer of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a layer of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-750014