Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-05-21
2000-12-12
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438658, 438659, 438680, H01L 2144, H01L 2148
Patent
active
061598488
ABSTRACT:
An object of the present invention is to provide a method of manufacturing a semiconductor device, which is capable of reducing metal-film stress produced upon formation of a high melting-point metal film by Chemical Vapor Deposition (CVD) and is very good in controllability. A typical invention of the present application is intended for the implantation of ions of an inert gas in the high melting-point metal film after deposition of the high melting-point metal film over a semiconductor wafer by CVD. According to the typical invention of the present application, since warpage of the semiconductor wafer due to the high melting-point metal film can be reduced, a failure in focus can be reduced in a patterning process for forming the subsequent interconnections, particularly an exposure process using a stepper. Accordingly, interconnections having desired dimensions can be formed.
REFERENCES:
patent: 4631804 (1986-12-01), Roy
patent: 5480836 (1996-01-01), Harada et al.
patent: 5882738 (1999-03-01), Blish, II et al.
Bowers Charles
Kilday Lisa
OKI Electric Industry Co., Ltd.
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