Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-03-07
2006-03-07
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S339000, C257S342000, C438S514000, C438S549000
Reexamination Certificate
active
07008865
ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 μm from the substrate surface is about 1×1015/cm3or more and is about 30% or more of that at a depth of about 2 μm from the substrate surface.
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