Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-26
2009-06-23
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07550378
ABSTRACT:
A method for manufacturing a semiconductor device including providing a semiconductor substrate including a cell area formed with relatively high device element density and a scribe line area formed with a device element density lower than the device element density of the cell area. An insulating layer is deposited over the semiconductor substrate. The insulating layer is planarized through a chemical mechanical polishing (CMP) process including a first polishing step and a second polishing step having different removal rates with respect to the insulating layer formed over the cell area and the scribe area.
REFERENCES:
patent: 6232228 (2001-05-01), Kwag et al.
patent: 2005/0026439 (2005-02-01), Watanabe et al.
Dongbu Hi-Tek Co., Ltd.
Harrison Monica D
Monbleau Davienne
Sherr & Vaughn, PLLC
LandOfFree
Method of manufacturing a semiconductor device having a cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device having a cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a cell... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4146240