Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-13
2008-12-16
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S003000, C438S240000, C438S254000
Reexamination Certificate
active
07465657
ABSTRACT:
There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first insulating film) formed over the silicon substrate, a first hole formed in the first interlayer insulating film, a first conductive plug formed in the first hole and connected electrically to the first impurity diffusion region and having an end portion protruded from an upper surface of the first interlayer insulating film, a conductive oxygen barrier film formed to wrap the end portion of the first conductive plug, and a capacitor formed by laminating a capacitor lower electrode, a capacitor dielectric film, and a capacitor upper electrode sequentially on the conductive oxygen barrier film.
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Japanese Office Action dated Sep. 30, 2008 of JP 2002-156291.
Fujitsu Limited
Hu Shouxiang
Westerman, Hattori, Daniels & Adrian , LLP.
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