Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-23
2011-08-23
Le, Thao (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S161000, C438S166000, C257SE21295, C257SE21414, C257SE23159, C257SE27111, C257SE29117, C257SE29294
Reexamination Certificate
active
08003449
ABSTRACT:
A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.
REFERENCES:
patent: 4797108 (1989-01-01), Crowther
patent: 5148259 (1992-09-01), Kato et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5952708 (1999-09-01), Yamazaki
patent: 5990542 (1999-11-01), Yamazaki
patent: 6013930 (2000-01-01), Yamazaki et al.
patent: 6057237 (2000-05-01), Ding et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6388270 (2002-05-01), Yamazaki et al.
patent: 6433842 (2002-08-01), Kaneko et al.
patent: 6562669 (2003-05-01), Suzawa et al.
patent: 6570552 (2003-05-01), Yamazaki
patent: 6680223 (2004-01-01), Yamazaki et al.
patent: 6709901 (2004-03-01), Yamazaki et al.
patent: 6808968 (2004-10-01), Yamazaki et al.
patent: 6825497 (2004-11-01), Lai
patent: 6828587 (2004-12-01), Yamazaki et al.
patent: 6913956 (2005-07-01), Hamada et al.
patent: 6924528 (2005-08-01), Yamazaki et al.
patent: 7037779 (2006-05-01), Nakajima
patent: 7169710 (2007-01-01), Yamazaki et al.
patent: 7232742 (2007-06-01), Maekawa
patent: 7316947 (2008-01-01), Yamazaki et al.
patent: 2001/0010953 (2001-08-01), Kang et al.
patent: 2001/0038127 (2001-11-01), Yamazaki et al.
patent: 2001/0052950 (2001-12-01), Yamazaki et al.
patent: 2002/0164843 (2002-11-01), Yamazaki et al.
patent: 2003/0207513 (2003-11-01), Saitou et al.
patent: 2004/0022664 (2004-02-01), Kubota et al.
patent: 2004/0108599 (2004-06-01), Takayama et al.
patent: 2006/0027804 (2006-02-01), Yamazaki et al.
patent: 2006/0189047 (2006-08-01), Yamazaki et al.
patent: 2007/0132377 (2007-06-01), Yamazaki et al.
patent: 09-228035 (1997-09-01), None
Katsuhiko Kumakawa, “Advancements in the Visibility of Moving Images of OCB”, Nikkei Microdevice, Flat Panel Display, 2002, pp. 102-103 (Partial Translation) Oct. 2001; pp. 102-109 (English Abstract).
Akimoto Kengo
Maruyama Hotaka
Costellia Jeffrey L.
Jones Eric W
Le Thao
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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