Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-01-11
2005-01-11
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S197000, C438S199000, C438S299000, C438S301000, C438S303000, C438S305000, C438S306000, C438S585000, C438S592000, C438S682000
Reexamination Certificate
active
06841429
ABSTRACT:
A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.
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Matsuda Satoshi
Ohuchi Kazuya
Gurley Lynne A.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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