Method of manufacturing a semiconductor device having...

Details Method of manufacturing a semiconductor device having... Method of manufacturing a semiconductor device having...

2005-09-06

2005-09-06

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S184000, C438S199000, C438S229000, C438S230000, C438S587000, C438S692000, C438S697000

Reexamination Certificate

active

06939786

ABSTRACT:
A method of manufacturing a semiconductor device having self-aligned contact structure with side wall spacers and offset nitride films. The method includes forming the side wall spacers as having lower side wall spacers that are composed of silicon oxide films and that are in contact with lower sides of gate electrode side walls, and as having upper side wall spacers that are composed of silicon nitride films and that are in contact with upper sides of the gate electrodes side walls. A distance is thus formed between the device substrate and an interface between the silicon nitride film and the silicon oxide film. This suppresses the hot carrier phenomenon and the occurence of poor contact.

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Ahn et al., “Hot-Carrier degration of single-drain PMOSFET's with differing sidewall spacer thicknesses”, IEEE electron device letters, vol. 13, Apr. 1992, pp. 711-713.

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