Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-03
2009-10-20
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S581000, C438S706000, C438S745000
Reexamination Certificate
active
07605076
ABSTRACT:
An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
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patent: 6638855 (2003-10-01), Chang et al.
patent: 1107338 (2003-04-01), None
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The Notification of the Office Action in the First Examination mailed Aug. 17, 2007, in counterpart Chinese Application No. 200610003051.5.
Ezawa Hirokazu
Harakawa Hideaki
Honda Makoto
Kaneko Hisashi
Matsuyama Hideto
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Vu Hung
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