Method of manufacturing a semiconductor device employing salicid

Details Method of manufacturing a semiconductor device employing salicid Method of manufacturing a semiconductor device employing salicid

1997-03-12

1999-09-21

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438299, 438229, H01L 2144

Patent

active

059566175

ABSTRACT:
After formation of a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate. The Ti layer is then silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi.sub.2 layer 12 is formed on another region.

REFERENCES:
patent: 5021853 (1991-06-01), Mistry
patent: 5170242 (1992-12-01), Stevens et al.
patent: 5427971 (1995-06-01), Lee et al.
patent: 5679983 (1997-10-01), Ishigami et al.
patent: 5773328 (1998-06-01), Blanchard
Wolf et al., Silicon Processing for the VLSI Era; vol. 1., p. 282, vol. II pp. 143-147, 1990.

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