Method of manufacturing a semiconductor device comprising a sili

Details Method of manufacturing a semiconductor device comprising a sili Method of manufacturing a semiconductor device comprising a sili

1985-05-02

1986-11-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29576W, 29580, 156646, 156648, 156653, 156657, 1566591, 156662, 252 791, 357 231, 357 41, 357 49, 427 93, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046220968

ABSTRACT:
The method of the present invention involves the forming of a depression with sidewalls extending below a first oxidation mask provided on a surface of a silicon body. Subsequently, after the sidewalls of the depression have been provided with a second oxidation mask, an oxidation treatment is carried out. According to the invention, the depression is provided in such a manner that the sidewalls of the depression are flat and form an angle of 25.degree. to 45.degree. with the original surface of the silicon body. The second oxidation mask is formed by a 5 to 50 nm thick layer of silicon nitride or silicon oxinitride applied directly or separated from the surface by a layer of silicon oxide having a thickness of less than 5 nm. This leads to a very flat structure.

REFERENCES:
patent: 4533429 (1985-08-01), Josquin

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