Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-04
1995-03-07
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257311, 257769, 257773, H01L 2702
Patent
active
053960955
ABSTRACT:
A semiconductor device in which a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in which a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen-containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time.
REFERENCES:
patent: 5214300 (1993-05-01), Rohrer et al.
S. M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons, New York (1985) p. 362.
S. Wolf, "Silicon Processing for the VLSI Era", vol. 1: Process Technology, p. 193.
Larsen Poul K.
Ulenaers Mathieu J. E.
Wolters Robertus A. M.
Biren Steven R.
Carroll J.
U.S. Philips Corporation
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