Method of manufacturing a semiconductor device capable of reduci

Details Method of manufacturing a semiconductor device capable of reduci Method of manufacturing a semiconductor device capable of reduci

1999-06-23

2000-09-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438675, 438682, H01L 2144

Patent

active

061142417

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO.sub.3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO.sub.3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH.sub.4 OH solution. The effective removal of the WO.sub.3 film reduces the contact resistance between a conductive material layer to be formed in he contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO.sub.3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.

REFERENCES:
patent: 5091763 (1992-02-01), Sanchez
patent: 5946595 (1999-08-01), Doan et al.

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