Method of manufacturing a semiconductor device by retarding the

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29578, 148187, 148188, 148190, 331 945H, 357 16, 357 18, H01L 2120, H01L 2122

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042808588

ABSTRACT:
A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present invention by diffusing zinc or cadmium from a surface of the substrate-adjoining region to the substrate, and abruptly limiting or retarding the diffusion of the zinc or cadmium into the substrate near a junction between the substrate and the region. This is accomplished in accordance with the present invention by selecting the net donor concentration in the substrate near the junction to be higher than the concentration of zinc or cadmium at the surface of the substrate-adjoining region.

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