Method of manufacturing a semiconductor device by plasma etching

Details Method of manufacturing a semiconductor device by plasma etching Method of manufacturing a semiconductor device by plasma etching

1986-03-03

1987-10-06

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 156653, H01L 21306

Patent

active

046981268

ABSTRACT:
A method of manufacturing a semiconductor device, in which a double layer consisting of a layer of polycrystalline silicon and a top layer of a silicide is applied to a surface of a semiconductor substrate coated with a layer of silicon oxide. After an etching mask has been provided, the double layer is etched in a plasma formed in chlorine gas to which up to 20% by volume of tetrachloromethane is added until the layer of polycrystalline silicon is etched. Thus, the double layer is etched anisotropically and the layer of silicon oxide is attacked in practice to a very small extent.

REFERENCES:
patent: 4449287 (1984-05-01), Maas
patent: 4479850 (1984-10-01), Beinvogel
patent: 4492610 (1985-01-01), Okano
patent: 4640737 (1987-02-01), Nagasaka
Donald L. Smith et al. "Plasma Beam Studies of Si and Al Etching Mechanisms" Journal of Vacuum Science Technology, p. 768, 10/82.

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