Method of manufacturing a semiconductor device and termination s

Details Method of manufacturing a semiconductor device and termination s Method of manufacturing a semiconductor device and termination s

1995-12-26

1997-05-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257390, 257401, 257620, 257635, 257756, 257773, 438273, 438140, H01L 2976, H01L 21265

Patent

active

056314841

ABSTRACT:
A method for forming a semiconductor device includes forming insulated gate regions (122,222) on a substrate (26) using a first photo-masking step, forming a base region (47) through an opening (143) between the insulated gate regions (122,222), and forming a source region (152) within the base region (47). Next, a protective layer (61) is formed and selectively patterned using a second photo-masking step to form an opening (62) within the first opening (143) and an opening (63) above one of the insulated gate regions (122). Next, a portion (66) of the substrate (26) and a portion (67) of the insulated gate region (122) are removed. Ohmic contacts (74,76) are then formed and patterned using a third photo-masking step. Additionally, a termination structure (81) is described.

REFERENCES:
patent: 4375717 (1983-03-01), Tonnel
patent: 4503598 (1985-03-01), Vora et al.
patent: 4748103 (1988-05-01), Hollinger
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4898835 (1990-02-01), Cawlfield
patent: 4960723 (1990-10-01), Davies
patent: 5171705 (1992-12-01), Choy
patent: 5182222 (1993-01-01), Malhi et al.
patent: 5304831 (1994-04-01), Yilmaz et al.
Christa Hardie, Electronic News--vol. 41--No. 2094, "IR Unveils 4-Step Masking Technology", Dec. 4, 1994, p. 74.

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