Method of manufacturing a semiconductor device and method of...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S789000

Reexamination Certificate

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06841489

ABSTRACT:
A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value; (c) growing a film on the first substrate by supplying vapor phase material in a material line to the first chamber; (d) introducing a second substrate into a second CVD chamber; (e) raising the second substrate temperature to the predetermined value; and (f) growing a film on the second substrate by supplying the vapor phase material to the second chamber. Steps (c) and (f) supply the vapor phase material selectively to the first and second chambers, respectively. In step (f) after step (c), the chamber to which the vapor phase material is supplied is switched from the first chamber to the second chamber so that the pressure of the vapor phase material in the material line is kept substantially constant.

REFERENCES:
patent: 4523544 (1985-06-01), Harada et al.
patent: 5229319 (1993-07-01), Kawakyu et al.
patent: 5811349 (1998-09-01), Watabe
patent: 6010969 (2000-01-01), Vaartstra
patent: 6130118 (2000-10-01), Yamazaki
patent: 6136725 (2000-10-01), Loan et al.
patent: 6139922 (2000-10-01), Kaloyeros et al.
patent: 6335281 (2002-01-01), Segi et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6528435 (2003-03-01), Yoo
patent: 6630413 (2003-10-01), Todd
patent: 1500691 (1978-02-01), None
patent: 5-9738 (1993-01-01), None
patent: 5-144733 (1993-06-01), None
patent: 5-270997 (1993-10-01), None
patent: 11-345770 (1999-12-01), None

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