Method of manufacturing a semiconductor device and a process of

Details Method of manufacturing a semiconductor device and a process of Method of manufacturing a semiconductor device and a process of

1997-07-29

2000-07-25

Pham, Long

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438166, 148DIG100, H01L 2184

Patent

active

060935863

ABSTRACT:
To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N.sup.+ doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film. In this state, a laser beam is radiated. The N.sup.+ doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature. As the amorphous silicon film is thicker in the area except the area under which the metallic film (the gate electrode) is formed than in the area under which the metallic film is formed, the maximum temperature of the surface of the film is equal and the overall film can be uniformly crystallized.

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