Method of manufacturing a semiconductor device, and a...

Details Method of manufacturing a semiconductor device, and a... Method of manufacturing a semiconductor device, and a...

2005-08-26

2008-10-21

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

C438S689000, C438S706000, C438S712000, C257S332000, C257S333000, C257S336000, C216S097000, C216S099000

Reexamination Certificate

active

07439183

ABSTRACT:
A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

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Official Action mailed by the Korean Patent Office on Oct. 16, 2006, in counterpart Korean Patent Application 10-2005-78204.
Official Action mailed by the Korean Patent Office on Oct. 16, 2006, in counterpart Korean Patent Application 10-2005-78204.
Notice of Reasons for Rejection mailed by the Japanese Patent Office on Apr. 8, 2008, for Japanese Patent Application No. 2004-248957, and English-language translation thereof.

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