Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-28
2011-10-04
Clark, S. V (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S720000
Reexamination Certificate
active
08030207
ABSTRACT:
A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
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Akiyama Shin-ichi
Kawamura Kazuo
Okubo Kazuya
Sakai Hisaya
Watatani Hirofumi
Clark S. V
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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